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IRF4905PBF www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.019 at VGS = - 10 V - 53 APPLICATIONS - 60 38 nC 0.026 at VGS = - 4.5 V - 42 Load Switch TO-220AB S G D G D S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VDS Drain-Source Voltage - 60 V VGS Gate-Source Voltage 20 TC = 25 C - 53a TC = 70 C - 46.8 Continuous Drain Current (TJ = 150 C) ID TA = 25 C -9.2b A TA = 70 C - 8.1b IDM Pulsed Drain Current - 200 IAS Avalanche Current Pulse - 45 L = 0.1 mH EAS Single Pulse Avalanche Energy 101 mJ TC = 25 C 69a IS Continuous Source-Drain Diode Current A TA = 25 C 2.1b TC = 25 C 104.2a TC = 70 C 66.7a PD Maximum Power Dissipation