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DISCRETE SEMICONDUCTORS DATA SHEET PHE13007 Silicon Diffused Power Transistor Product specification February 2018 WeEn Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V VCBO Collector-Base voltage (open emitter) - 700 V VCEO Collector-emitter voltage (open base) - 400 V VEBO Emitter-Base voltage (IB = 0) - 9 V IC Collector current (DC) - 8 A ICM Collector current peak value - 16 A Ptot Total power dissipation Tmb 25 C - 80 W VCEsat Collector-emitter saturati