Скачать даташит для btc2411n3g:

Spec. No. C203N3G Issued Date 2008.12.26 CYStech Electronics Corp. Revised Date Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTC2411N3G Description The BTC2411N3G is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.4V at I /I = 500mA/50mA. CE(sat) CE(sat) C B Optimal for low Voltage operation. Complementary to BTA1036N3G. Pb-free and Halogen-free package Symbol Outline BTC2411N3G SOT-23 B Base C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 0.6 A Power Dissipation (TA=25 C) PD 225 (Note) mW Power Dissipation (TC=25 C) PD 560 mW Therm