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Spec. No. C203N3 Issued Date 2002.05.11 CYStech Electronics Corp. Revised Date 2010.11.12 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor MMBT2222A Description The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/50mA. CE(sat) CE(sat) C B Optimal for low Voltage operation. Complementary to MMBT2907A. Pb-free package Symbol Outline MMBT2222A SOT-23 B Base C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Current IC 0.6 A Power Dissipation (TA=25 C) PD 225 (Note) mW Power Dissipation (TC=25 C) PD 560 mW Thermal Resistan