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2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power Features MOSFET 3.5A, 200V The 2N6790 is an N-Channel enhancement mode silicon rDS(ON) = 0.800 gate power MOS field effect transistor designed for SOA is Power Dissipation Limited applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high Nanosecond Switching Speeds power bipolar switching transistors requiring high speed and Linear Transfer Characteristics low gate drive power. This device can be operated directly from an integrated circuit. High Input Impedance Majority Carrier Device Ordering Information Related Literature PART NUMBER PACKAGE BRAND - TB334 Guidelines for Soldering Surface Mount 2N6790 TO-205AF 2N6790 Components to PC Boards NOTE When ordering, include the entire part