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BC546/547/548/549/550 Switching and Applications High Voltage BC546, VCEO=65V Low Noise BC549, BC550 Complement to BC556 ... BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BC546 80 V BC547/550 50 V BC548/549 30 V VCEO Collector-Emitter Voltage BC546 65 V BC547/550 45 V BC548/549 30 V VEBO Emitter-Base Voltage BC546/547 6 V BC548/549/550 5 V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 C TSTG Storage Temperature -65 150 C Electrical Characteristics Ta=25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA hFE DC Current Gain VCE=5V, IC=2mA 110 800 V