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BC556/557/558/559/560 Switching and Amplifier High Voltage BC556, VCEO= -65V Low Noise BC559, BC560 Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BC556 -80 V BC557/560 -50 V BC558/559 -30 V VCEO Collector-Emitter Voltage BC556 -65 V BC557/560 -45 V BC558/559 -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 C TSTG Storage Temperature -65 150 C Electrical Characteristics Ta=25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA hFE DC Current Gain VCE= -5V, IC=2mA 110 800 VCE Collector-Emit