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August 2008 UniFETTM FDA24N50 N-Channel MOSFET 500V, 24A, 0.19 Features Description RDS(on) = 0.16 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 65nC) DMOS technology. Low Crss ( Typ. 35pF) This advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- Fast switching mance, and withstand high energy pulse in the avalanche and 100% avalanche tested commutation mode. These devices are well suited for high effi- cient switching mode power supplies and active power factor Improved dv/dt capability correction. RoHS compliant D G TO-3PN G D S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Dr