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July 2005 FDD6670A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 66 A, 30 V RDS(ON) = 8 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 10 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge low gate charge, low RDS ( ON) , fast switching speed and extremely low RDS(ON) in a small package. Fast Switching Applications High performance trench technology for extremely DC/DC converter low RDS(ON) Motor Drives D D G G S D-PAK TO-252 (TO-252) S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 V ID Continuous Drain Current @TC=25 C (Note 3) 66 A @TA=25 C (Not