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October 2014 FDMS0300S N-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 m Features General Description The FDMS0300S has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.0 m at VGS = 4.5 V, ID = 25 A package technologies have been combined to offer the lowest Advanced Package and Silicon combination for low rDS(on) rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. SyncFET Schottky Body Diode Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL tested Notebook Vcore/ GPU low side switch RoHS Compliant Networking Point of Load low side switch Bottom Top Pin 1 D G S 5 4 S S