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October 2014 FDMS8670S tm N-Channel PowerTrench SyncFETTM 30V, 42A, 3.5m Features General Description The FDMS8670S has been designed to minimize losses in Max rDS(on) = 3.5m at VGS = 10V, ID = 20A power conversion application. Advancements in both silicon and Max rDS(on) = 5.0m at VGS = 4.5V, ID = 17A package technologies have been combined to offer the lowest Advanced Package and Silicon combination for low rDS(on) rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. SyncFET Schottky Body Diode Application MSL1 robust package design RoHS Compliant Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Top Bottom Pin 1 S D 5

 

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 fdms8670s.pdf Проектирование, MOSFET, Мощность

 fdms8670s.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 fdms8670s.pdf База данных, Инновации, ИМС, Транзисторы

 

 

 


 
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