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February 2009 FGA25N120FTD tm 1200V, 25A Trench IGBT Features Field stop trench technology General Description High speed switching Using advanced field stop trench technology, Fairchild s 1200V Low saturation voltage VCE(sat) =1.6V @ IC = 25A trench IGBTs offer superior conduction and switching perfor- High input impedance mances, and easy parallel operation with exceptional avalanche RoHS complaint ruggedness. This device is designed for soft switching applica- tions. Applications Induction heating and Microvewave oven Soft switching applications C G TO-3P E G C E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 1200 V VGES Gate to Emitter Voltage 25 V Collector Current @ TC = 25oC50 A IC Collector Current @ TC = 100oC25 A ICM (1) Pulsed Collector Current 75 A IF Diode conti

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 fga25n120ftd.pdf Проектирование, MOSFET, Мощность

 fga25n120ftd.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 fga25n120ftd.pdf База данных, Инновации, ИМС, Транзисторы