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TIGER ELECTRONIC CO.,LTD 500V N-Channel MOSFET FQD5N50 DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. O ABSOLUTE MAXIMUM RATINGS( Ta = 25 C) Parameter Value Unit Symbol Drain-Source Voltage V 500 V DSS Drain Current - Continuous I 3.5 A D Drain Current - Pulsed I 14 A DM Gate-Source Voltage V 30 V GSS Power Dissipation P 50 W D o Max. Operating Junction Temperature T 150 C j TO-252 o Storage Temperature T -55 150 C stg O ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Sym