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IRFP350A FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.254 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 400 Continuous Drain Current (TC=25 C) 17 ID A Continuous Drain Current (TC=100 C) 10.8 IDM Drain Current-Pulsed (1) 68 A VGS Gate-to-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (2) 1156 mJ IAR Avalanche Current (1) 17 A EAR Repetitive Avalanche Energy (1) 20.2 mJ dv/dt Peak Diode Recovery dv/dt (3) 4.0 V/ns Total Power Dissipation (TC=25 C) 202 W PD Linear Derating Factor 1.61 W/ C Operating Junction and TJ