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KSE800/801/802/803 Monolithic Construction With Built-in Base- Emitter Resistors High DC Current Gain hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collector- Base Voltage KSE800/801 60 V KSE802/803 80 V B VCEO Collector-Emitter Voltage KSE800/801 60 V KSE802/803 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 4 A R1 R2 IB Base Current 0.1 A PC Collector Dissipation (TC=25 C) 40 W E R1 10k R2 0.6k TJ Junction Temperature 150 C TSTG Storage Temperature - 55 150 C Electrical Characteristics TC=25 C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emit