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FIR10N65FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features High Voltage BVDSS=650V(Min.) Low Crss Crss=16pF(Typ.) G Low gate charge Qg=35nC(Typ.) D S Low RDS(on) RDS(on)=0.8 D G S Marking Diagram Y = Year A = Assembly Location YAWW WW = Work Week FIR10N65F FIR10N65F = Specific Device Code Absolute maximum ratings (TC=25 C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS 30 V TC=25 C 10 A Drain current (DC) * ID TC=100 C 5.5 A Drain current (Pulsed) * IDM 40 A Power dissipation PD 50 W Avalanche current (Single) IAS 10 A Single pulsed avalanche energy EAS 608 mJ Avalanche current (Repetitive) IAR 10 A Repetitive avalanche energy EAR 11.6 mJ Junction temperature TJ 150 C Storage