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SEMICONDUCTOR 2N2222AE TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier 3 applications. They are housed in the SC-89 package which is designed for low power surface mount applications. 1 Features 2 compliance with RoHS requirements. We declare that the material of product SC-89 ORDERING INFORMATION COLLECTOR Device Maring Shipping 3 2N2222AE 1P 3000 / Tape & Reel 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25 C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation (Note 1) PD 150 mW TA = 25 C Thermal Resistance, R 833 C/W JA Junction-to-Ambient Operating and Storage Junction TJ,