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SEMICONDUCTOR BC337/338 TECHNICAL DATA BC337/BC338 TRANSISTOR (NPN) B C FEATURES High Current IC=800mA. DC Current Gain hFE=100 630 (VCE=1V, Ic=100mA). DIM MILLIMETERS For Complementary with PNP type BC327. A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85 H 0.45 _ H J 14.00 + 0.50 L 2.30 Symbol Parameter Value Unit F F M 0.51 MAX VCBO Collector-Base Voltage BC337 50 V 1 2 3 1. COLLECTOR BC338 30 2. BASE 3. EMITER VCEO Collector-Emitter Voltage BC337 45 V BC338 25 VEBO Emitter-Base Voltage 5 V TO-92 IC Collector Current -Continuous 800 mA PD Total Device Dissipation 625 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Coll