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SEMICONDUCTOR FTC945B TECHNICAL DATA NPN TRANSISTOR B C FEATURE Excellent hFE linearity DIM MILLIMETERS Low noise A 4.70 MAX E B 4.80 MAX G Complementary to FTA733B C 3.70 MAX D D 0.55 MAX E 1.00 MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 1.27 G 0.85 H 0.45 Symbol Parameter Value Units _ H J 14.00 + 0.50 L 2.30 F F VCBO Collector-Base Voltage 60 V M 0.51 MAX VCEO Collector-Emitter Voltage 50 V 1 2 3 1. EMITTER 2. BASE VEBO Emitter-Base Voltage 5 V 3. COLLECTOR IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 400 mW TO-92 TJ Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 60 V Collector-emitter breakdown volta