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SEMICONDUCTOR FTK10N65P / F / DD TECHNICAL DATA 10 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse in the avalanche and commutaion mode .These devices are well suited for high efficiency switch mode power supply electronic lamp ballasts F based on half bridge topology. 1 TO-220F FEATURES * RDS(ON) = 1.0 @VGS = 10V * Low gate and reverse transfer Capacitance ( C 18 pF typical ) * Fast switching capability DD * Avalanche energy tested 1 * Improved dv/dt capability, high ruggedness TO-263 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Pin Assignment Order