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FMC10N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V) High avalanche durability Gate(G) Applications Source(S) Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25 C (unless otherwise specified) Description Symbol Characteristics Unit Remarks VDS 600 V Drain-Source Voltage VDSX 600 V VGS = -30V Continuous Drain Current ID 10 A Pulsed Drain Current IDP 40 A Gate-Source Voltage VGS 30 V Repetitive and Non-Repetitive Maximum AvalancheCur