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10N65A/10N65AF GOFORD Description Features VDSS RDS(ON) ID @ 10V (typ) 10A 650V 0.72 Fast switching 100% avalanche tested Improved dv/dt capability Application Active power factor correction Uninterruptible Power Supply (UPS) Electronic lamp ballasts Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter TO-220 TO-220F Units V Drain-Source Voltage 650 V DSS V Gate-Source Voltage 30 V GSS TC = 25 10 10* A I Continuous Drain Current D T = 100 6.23 6.23* A C I Pulsed Drain Current note1 40 40* A DM EAS Single Pulsed Avalanche Energy note2 280 mJ dv/dt Peak Diode Recovery Energy note3 4.5 V/ns Power Dissipation TC = 25 156 50 W P D Linear Derating Factor T > 25 1.25 0.4 W/ C R Thermal Resistance, Junction to Case 0.8 2.5 /W JC T , T Operating and S

 

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 10n65a 10n65af.pdf Проектирование, MOSFET, Мощность

 10n65a 10n65af.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 10n65a 10n65af.pdf База данных, Инновации, ИМС, Транзисторы

 

 

 


 
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