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HGTP3N60C3D, HGT1S3N60C3D, S E M I C O N D U C T O R HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB 6A, 600V at TC = +25oC EMITTER COLLECTOR 600V Switching SOA Capability GATE Typical Fall Time - 130ns at TJ = +150oC COLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode Description JEDEC TO-262AA EMITTER The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS COLLECTOR GATE are MOS gated high voltage switching devices combining the COLLECTOR (FLANGE) best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT used is the dev