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2SB562 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD468 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB562 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 1.0 A Collector peak current iC(peak) 1.5 A Collector power dissipation PC 0.9 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 25 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 20 V IC = 1 mA, RBE = voltage Emitter to base breakdown V(BR)EBO 5 V IE = 10 A, IC =

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 2sb562.pdf Проектирование, MOSFET, Мощность

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