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2SC3413 Silicon NPN Epitaxial Application Low frequency low noise amplifier HF amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3413 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 40 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 30 V IC = 1 mA, RBE = voltage Emitter to base breakdown V(BR)EBO 5 V IE = 10 A, IC = 0 voltage Collector cutoff current ICBO 0.5 A VCB = 18 V, IE = 0 Emitter