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Spec. No. MOS200906 HI-SINCERITY Issued Date 2009.03.23 Revised Date 2009.08.05 MICROELECTRONICS CORP. Page No. 1/6 H10N65 Series H10N65 Series Tab 3-Lead Plastic TO-220AB N-Channel Power MOSFET (650V,10A) Package Code E Pin 1 Gate Pin 2 & Tab Drain Applications Pin 3 Source 3 2 Switch Mode Power Supply 1 3-Lead TO-220FP) Uninterruptable Power Supply Plastic Package High Speed Power Switching Package Code F Pin 1 Gate Pin 2 Drain 3 Pin 3 Source 2 Features 1 H10N65 Series Symbol H10N65 is a High voltage NChannel enhancement mode power MOSFET D chip fabricated in advanced silicon epitaxial planar technology Advanced termination scheme to provide enhanced voltageblocking capability G Avalanche Energy Specified Source to Drain Diode Recovery Time Comparable to a Discrete Fast Re