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SMF10N65 650V N-Channnel MOSFET Features 10.0A, 650V, R =0.80 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value Unit V Drain-Source Voltage 650 V DSS 10.0* A Drain Current - Continuous(Tc=25 C) I D - Continuous(Tc=100 C) 6.0* A I Drain Current -Pulsed (Note1) 40* A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note2) 713 mJ AS I Avalanche Current (Note1) 10.0 A AR E Repetitive Avalanche Energy (Note1) 17.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note3) 4.5 V/ns 50 W Power Dissipation(T =25 C) C P D -Derate above 25 C 0.4 W/ C Tj Operating Junc