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isc Silicon NPN Power Transistor 2N3772J DESCRIPTION J High DC Current Gain-h 100-150@I = 10A FE C Low Saturation Voltage- V )= 1.4V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 20 A C I Collector Current-Peak 30 A CM I Base Current-Continuous 5 A B P Collector Power Dissipation @T =25 150 W C C T Junction Temperature 200 J Storage Temperature -65 200 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.17 /W R th j-c 1