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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4398 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.0V(Max.)@ IC= -15A Wide Area of Safe Operation Complement to Type 2N5301 APPLICATIONS Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -30 A C I Collector Current-Peak -50 A CM I Base Current-Continuous -7.5 A B I Base Current-Peak -15 A BM Collector Power Dissipation@Ta=25 5 P W C Collector Power Dissipation@T =25 200 C T Junction Temperature 200 J Tstg Storage Temperature -65 200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistanc