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isc Silicon PNP Power Transistor 2SA1109 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min.) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -180 V CBO V Collector-Emitter Voltage -180 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -10 A C I Collector Current-Peak -14 A CM Collector Power Dissipation P 200 W C @T =25 C T Junction Temperature 150 j Storage Temperature -55 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1109 ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specifi