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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2316 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 6 A C Total Power Dissipation P 50 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2316 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PAR