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INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2757 DESCRIPTION Low Noise High Current-Gain Bandwidth Product Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 15 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 50 mA C Collector Power Dissipation P 0.15 W C @T =25 C T Junction Temperature 125 J Storage Temperature Range -55 125 T stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2757 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNI