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INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3357 DESCRIPTION Low Noise and High Gain NF = 1.1 dB TYP., G = 8.0 dB TYP. a @V = 10 V, I = 7 mA, f = 1.0 GHz CE C NF = 1.8 dB TYP., G = 9.0 dB TYP. a @V = 10 V, I = 40 mA, f = 1.0 GHz CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V CBO V Collector-Emitter Voltage 12 V CEO V Emitter-Base Voltage 3.0 V EBO I Collector Current-Continuous 0.1 A C Collector Power Dissipation P 1.2 W C @T =25 C T Junction Temperature 150 J T Storage Temperature Range -65 150 stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark INCHANGE Semiconduct