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isc Silicon NPN Power Transistor 2SC3416 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V (Min) (BR)CEO Complement to Type 2SA1352 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output, high-voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 200 V CBO V Collector-Emitter Voltage 200 V CEO V Emitter-Base Voltage 5.0 V EBO I Collector Current-Continuous 0.1 A C I Collector Current-Peak 0.2 A CM Collector Power Dissipation 1.2 @ T =25 a P W C Total Power Dissipation 5 @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3416 ELECTRICAL CHARA