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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3419 DESCRIPTION Low Collector Saturation Voltage High power dissipation Complementary to 2SA1356 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 0.8 A C Collector Power Dissipation P 5.0 W C @ Tc=25 T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3419 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBO