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isc Silicon NPN Power Transistor 2SC937 DESCRIPTION High Breakdown Voltage- V = 1200V(Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-Emitter Voltage 500 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current- Continuous 2.5 A C I Collector Current-Pulse 6 A CP Collector Power Dissipation P 22 W C @ T = 25 C T Junction Temperature 125 J T Storage Temperature Range -45 125 stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC937 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PARAMETER CONDITIONS MIN TYP.