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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD130 DESCRIPTION DC Current Gain -h = 15(Min)@ I = 3A FE C Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current-Continuous 3.0 A C I Collector Current-Peak 5.0 A CM I Base Current 1.0 A B P Collector Power Dissipation@T =25 25 W C C T Junction Temperature 150 J T Storage Temperature -65 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Tran