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isc Product Specification isc Silicon NPN Power Transistor 2SD1503 DESCRIPTION High Collector-Base Voltage - V = 900V(Min) CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 900 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 6 A C Collector Power Dissipation P 50 W C @T =25 C T Junction Temperature 150 j Storage Temperature Range -65 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Product Specification isc Silicon NPN Power Transistor 2SD1503 ELECTRICAL CHARACTERISTICS T =25 unles