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isc Silicon NPN Darlington Power Transistor 2SD1509 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I =1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 80 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 8 V EBO I Collector Current-Continuous 2 A C I Collector Current-Peak 4 A CM I Base Current 0.5 A B Collector Power Dissipation 10 T =25 C P W C Collector Power Dissipation 1.5 T =25 a T Junction Temperature 150 j T Storage Temperature Range -55 150