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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD316 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 5.0A CE(sat) C Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 7 A C I Collector Current-Peak 12 A CM I Base Current-Continuous 3 A B P Collector Power Dissipation @T =25 80 W C C T Junction Temperature 150 J T Storage Temperature -65 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered t

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