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INCHANGE Semiconductor isc N-Channel MOSFET Transistor FDA24N50F FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate-Source Voltage 30 V GSS Drain Current-Continuous;Tc=25 24 I A D 14 Tc=100 I Drain Current-Single Pulsed 96 A DM P Total Dissipation 270 W D T Operating Junction Temperature -55 150 j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.46 /W Rth(ch-a) Channel-to-ambient thermal resistance 40 1 isc website www.i