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INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF3710 FEATURES Drain Current I =57A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 23m (Max) DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for high effciency switch mode power supplies, Power factor correction and electronic lamp ballasts based on half bridge. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage-Continuous 20 V GS I Drain Current-Continuous 57 A D I Drain Current-Single Plused 230 A DM P Total Dissipation @T =25 200 W D C T Max. Operating Junction Temperature -55 175 j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Ther