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isc P-Channel MOSFET Transistor IRF5305,IIRF5305 FEATURES Static drain-source on-resistance RDS(on) 0.06 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage -55 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous -31 A D I Drain Current-Single Pulsed -110 A DM P Total Dissipation @T =25 110 W D C Max. Operating Junction Temperature 175 T j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(j-c) Channel-to-case thermal

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 irf5305.pdf Проектирование, MOSFET, Мощность

 irf5305.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irf5305.pdf База данных, Инновации, ИМС, Транзисторы