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Isc N-Channel MOSFET Transistor IRF630NS FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 9.3 A D P Total Dissipation @T =25 82 W D C T Max. Operating Junction Temperature -55 175 j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(j-c) Channel-to-case thermal resistance 1.83 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor IRF630NS ELEC