Скачать даташит для irfp260:

iscN-Channel MOSFET Transistor IRFP260 FEATURES Low drain-source on-resistance RDS(ON) 55m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 46 A D I Drain Current-Single Pulsed 180 A DM P Total Dissipation @T =25 280 W D C T Max. Operating Junction Temperature -55 150 j T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.45 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark iscN-Channel MOSFET T