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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP32N50K FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate-Source Voltage 30 V GSS Drain Current-Continuous@Tc=25 32 I A D 20 Tc=100 I Drain Current-Single Pulsed 130 A DM P Total Dissipation 460 W D T Operating Junction Temperature -55 150 j T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.26 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel M