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Isc N-Channel MOSFET Transistor IXTM24N50 FEATURES With To-3 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate-Source Voltage 30 V GSS I Drain Current-Continuous 24 A D I Drain Current-Single Pulsed 96 A DM P Total Dissipation @T =25 300 W D C T Max. Operating Junction Temperature 150 ch Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.42 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor IXTM24N50 ELECTRICAL CHARACTER