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isc Silicon NPN Power Transistor S9013 DESCRIPTION Excellent hFE linearity Complement to PNP Type S9012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 500 mA C Collector Power Dissipation P 625 mW C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor S9013 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C UNI SYMBOL PARAMETER CONDITIONS MIN TYP. MAX T V Collector-base breakdown voltage I = 100 A , I =0 40 V (BR)CB