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isc Silicon NPN Power Transistor TIP35CF DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP36CF Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current -Continuous 25 A C I Collector Current-peak 40 A CM I Base Current 5 A B Collector Power Dissipation P 125 W C @ T =25 C T Junction Temperature 150 j Storage Temperature -65 150 T stg THERMAL CHARACTERISTICS SYMBOL