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IPD60R600P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. 2 1 Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much 3 cooler. Features Drain Pin 2 Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness Gate Significant reduction of switching and conduction losse